E3 2013

Aftab's paper in 3rd Berkeley Symposium on Energy Efficient Electronic Systems!

9/14/2013

‚ÄčIts always gratifying to be recognized by the world's best and in this case inarguably Berkeley is world's best device school. Aftab's paper on SiSn is accepted in 3rd Berkeley Symposium on Energy Efficient Electronic Systems.

 

SiSn Channel Material for Enhanced Performance in MOSFETs

Aftab M. Hussain, Hossain M. Fahad, Nirpendra Singh, Kelly R. Rader, Galo A. Torres Sevilla, Udo Schwingenschlögl and Muhammad M. Hussain
 
We have presented a low-cost and scalable way to improve the performance of silicon pMOSFETs. Standard CMOS fabrication processes have been followed in manufacturing of the SiSn devices, after Sn diffusion into silicon (100). Thus, these devices are completely compatible with the current CMOS technology. We have also reported a 14% improvement in the mean effective hole mobility, 9% improvement in thsub thresholdold slope, and 24% improvement in peak Gm,lin for SiSn as compared to silicon. Further, the Ioff is seen to decrease significantly for SiSn devices, while maintaining a similar Ion, compared to the silicon devices. Hence, the incorporation of SiSn devices into CMOS circuits can yield faster circuits that consume lower power.