​Jhonathan P. Rojas, Galo Torres Sevilla, Muhammad M. Hussain, “Structural and Electrical Characteristics of High-k/Metal Gate MOSCAPs Fabricated on Flexible, Semi-transparent Silicon (100) Fabric”, Appl. Phys. Lett. (Just Accepted)

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10,000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry’s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m^-1), optically semi-transparent silicon fabric (1.5 cm x 3 cm x 25 mm). The electrical characteristics show 3.7 nm effective oxide thickness (EOT), -0.2V flat band voltage and no hysteresis from the fabricated MOSCAPs.