Amir:
I promised to you when you approached me last year to join our group that in a year
we will publish on topic you enjoy. It’s not a year yet, we have an APL just
accepted and TED on the way followed by pss-RRL!
Zinc Oxide Integrated Area Efficient High Output Low Power
Wavy Channel Thin Film Transistor
A.N. Hanna, M. T. Ghoneim, R. R. Bahabry, A. M. Hussain,
M. M. Hussain
We report an atomic layer deposition based zinc oxide
channel material integrated thin film transistor using wavy channel
architecture allowing expansion of the transistor width in the vertical
direction using the fin type features. The experimental devices show area
efficiency, higher normalized output current and relatively lower power
consumption compared to the planar architecture. This performance gain is
attributed to the increased device width and an enhanced applied electric field
due to the architecture when compared to a back gated planar device with the
same process conditions.
Congratulations Amir et al.!