Ghoneim:
Congratulations for taking the initiative to
transform a mere concept and observation into a solid paper! This is an
important skill as a growing researcher and just stay on the course to achieve
more. With this paper, we are not enjoying sweet 16 journal papers since the year began ... the race is not over yet ...
Additive
advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with
release-first process
Mohamed
T. Ghoneim, Jhonathan P. Rojas, Aftab M. Hussain, and Muhammad M. Hussain
We report
the inherent increase in capacitance per unit planar area of state-of-the art
high-k integrated metal/insulator/metal
capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first
process. We methodically study and show that our approach to transform bulk
silicon (100) into a flexible fabric adds an inherent advantage of enabling
higher integration density dynamic random access memory (DRAM) on the same chip
area. Our approach is to release an ultra-thin silicon (100) fabric (25 µm
thick) from the bulk silicon wafer, then build MIMCAPs using sputtered
aluminum electrodes and successive atomic layer depositions (ALD) without
breaking the vacuum of a high-k aluminum oxide sandwiched between two tantalum nitride layers. This
result shows that we can obtain flexible electronics on silicon without sacrificing
the high density integration aspects and also utilize the non-planar geometry
associated with fabrication process to obtain a higher integration density
compared to bulk silicon integration due to an increased normalized capacitance
per unit planar area.