Page 01/06/2014 14:41:46

Hmm, it begins and hope it continues ... Aftab's MS thesis in pss-RRL!

1/6/2014
Hmm, it begins and hope it continues …
 
It is said that morning shows the day however we would like to be cautious and see how this year unfolds. For now, Aftab has started the engine and hopefully 3-4 more are on their way this month. Aftab’s MS thesis entitled, “Tin – An unlikely ally for silicon field effect transistors?” is accepted to Physica Status Solidi (RRL) - Rapid Research Letters.
 
In this paper, we explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductor (CMOS). Our density functional theory (DFT) based simulation shows that incorporation of tin reduces the band gap of Si(Sn).We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors (MugFETs) using SiSn as channel material show performance enhancement which is in accordance with the theoretical analysis.
 
According to the esteemed reviewers the results are “original” and “interesting”. After presenting in Device Research Conference 2013, 3rd  Berkeley Symposium on Energy Efficient Electronic Systems and IEEE NMDC 2013, we are ready to roll out SiSn based NMOS and much deeper analysis of the material-device interaction to extend the Moore’s Law.
 
Congrats Aftab M. Hussain, Hossain M. Fahad, Nirpendra Singh, Galo A. Torres Sevilla, Udo Schwingenschlögl, Muhammad M. Hussain!