Page 01/15/2014 19:06:30

Galo's goal in Advanced Materials!

​"In a breathtaking set of demonstrations, the authors show the ability to integrate 20 nm FinFET devices onto thin flexible sheets of plastic.  They show the performance, examine the bending properties, and argue for scalable use of the process in applications of flexible electronics.  This work is at the very highest end of the distribution of research papers in advanced materials, fabrication techniques, and unusual electronic systems.  I recommend publication, in the most enthusiastic terms." – This is what Reviewer has written in his kind review.
About what?
et al. has demonstrated the world’s highest performance flexible electronics with the semiconductor industry’s most advanced device architecture FinFET! In the paper entitled, “Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-architecture Inspired Computation”, we have demonstrated a pragmatic way to transform SOI based state-of-the-art FinFET into flexible and semi-transparent silicon-on-polymer FinFET while retaining high performance and integration density. The process shown has the unique characteristic that all the devices can be fabricated prior to release without any constraint set by the high thermal budget or by the etch holes due to the extremely high etch selectivity between silicon and silicon dioxide. Our process thus sets a major step towards the integration of state-of-the-art high performance devices for ultra-mobile brain-inspired foldable computers or ICs. The electrical superiority achieved with inorganic semiconducting substrates and the maturity of silicon microfabrication industry make the integration of silicon on flexible platforms the most logical next step towards achieving high computational capabilities in mobile devices. Ultra-thin (1 mm) nature of the silicon fabric with devices makes it ultra-light-weight also. We have chosen to demonstrate high performance P- and NMOS devices in flexible silicon fabric to prove the compatibility of our process with the backbone of high performance CMOS based electronics. Although we have not shown complete circuitry on flexible silicon fabric due to mismatched Vth shift in PMOS devices, this work indicates that with the correct process optimization and integration of dual high-k/metal gate for threshold voltage correction, we can transform large scale state-of-the-art high performance circuitry without affecting its performance. The released transistors feature the most advanced architectures used in semiconductor industry as well as the most sophisticated set of materials, high-k/metal gate stack, used to overcome scaling problems in modern solid state devices. Electrical characterization of our devices shows a sub-threshold swing of 80 mVdec-1 for NMOS and 70 mVdec-1 for PMOS and Ion/Ioff ratio of 4.6 decades for NMOS and 4.78 decades for PMOS. The step sub-threshold swings indicate faster switching with sufficient distinction between on and off state. The released fabric is 1 mm in thickness and is capable of achieving a minimum-bending radius of 5 mm in device scale. Also, since the fabric is extremely thin and our host substrate is a polyimide sheet, the complete set of devices exhibits semitransparency. These fabricated devices show competitive electrical behavior and outstanding bendability relying only on mature microfabrication processes. Finally, we believe our process sets a major step towards the integration of the most reliable and broadly used material in semiconductor industry, silicon, on flexible platforms for the expansion of ultra-mobile high performance flexible electronics which will mimic ultra-compact brain-inspired folding capability. 
In our humble opinion this is a feat we wanted to reach and now we go forward with more inspirations and vigor in our hearts.
We have a KAUST School student Rawan Ghanem publishing a paper in Adv. Mat.? Yes! Advanced Materials with a new Impact Factor of 14.829, a 6.86% increase over 2011 (13.877) following on from surges of 28% and 30% in the preceding two years. One key to the success of Advanced Materials is its pronounced interdisciplinarity, manifested in its rare listing in six different topic categories by ISI.
Way to go, Galo A. Torres Sevilla, Jhonathan P. Rojas, Hossain M. Fahad, Aftab M. Hussain, Rawan Ghanem, Casey E. Smith and Muhammad M. Hussain!!!