Ramy et al. have shown no in their just accepted
paper in Phys. Status Solidi RRL entitled, “Atmospheric pressure chemical vapor
deposition (APCVD) grown bi-layer graphene transistor characteristics at high
temperature”. In this paper, we have reported the characteristics of
atmospheric chemical vapor deposition grown bilayer graphene transistors
fabricated on ultra-scaled (10 nm) high-k
dielectric aluminum oxide (Al2O3) at elevated
temperatures. We observed that the drive current increased by >400% as
temperature increased from room temperature to 250°C. Low gate leakage was
maintained for prolonged exposure at 100oC but increased
significantly at temperatures >200 °C. These results provide important
insights for considering chemical vapor deposition graphene on aluminum oxide
for high temperature applications where low power and high frequency operation
are required.
Ramy M. Qaisi, Casey E. Smith, and Muhammad M. Hussain,
“Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene
transistor characteristics at high temperature”, Phys. Status Solidi RRL [Just
Accepted]
More we want, Ramy!