Page 06/11/2014 14:21:59

Joanna's MS Thesis in pss-RRL (The Fastest Ever)!

Thanks Joanna for keeping our publication machine running although it needs to run faster than the current mode. But more importantly having an archived journal paper documenting that our flexing process is expandable to germanium is critical. Finally, congrats for being the fastest to publish MS thesis work in a journal: Physica Status Solidi (RRL) - Rapid Research Letters. One reviewer commented, “The authors recently published a milestone paper in ACS Nano showing a new way to making flexible electronics. This manuscript contains sufficient novel information for publication in PSS. By publishing this MS, the method that the authors demonstrated will spread further to potential readers. I have not seen many flexible Ge work so far. I am only aware of some flexible Ge PD work. The ultra-flexible/transparent Ge MOS work is pretty novel to me.”
Although the Editor of Small thought the paper merit publication in their journal but that struggle will continue for years to come before we bulldoze others.
Low-Cost High Quality Crystalline Germanium Based Flexible Devices
Joanna M. Nassar, Aftab H. Hussain, Jhonathan P. Rojas, and Muhammad M. Hussain
High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, lightweight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal oxide semiconductor capacitors (MOSCAPs) with high-k/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain high quality Ge channel. We report outstanding bending radius ~ 1.25 mm and semi-transparency of 30%.