Thanks Joanna for keeping our publication machine running
although it needs to run faster than the current mode. But more importantly
having an archived journal paper documenting that our flexing process is
expandable to germanium is critical. Finally, congrats for being the fastest to
publish MS thesis work in a journal: Physica Status Solidi (RRL) - Rapid Research
Letters. One reviewer commented, “The authors recently published a milestone
paper in ACS Nano showing a new way to making flexible electronics. This
manuscript contains sufficient novel information for publication in PSS. By
publishing this MS, the method that the authors demonstrated will spread
further to potential readers. I have not seen many flexible Ge work so far. I
am only aware of some flexible Ge PD work. The ultra-flexible/transparent Ge
MOS work is pretty novel to me.”
Although the Editor of Small thought the paper merit
publication in their journal but that struggle will continue for years to come
before we bulldoze others.
Low-Cost High Quality Crystalline Germanium Based
Flexible Devices
Joanna M. Nassar, Aftab H. Hussain, Jhonathan P. Rojas,
and Muhammad M. Hussain
High performance flexible electronics promise innovative
future technology for various interactive applications for the pursuit of
low-cost, lightweight, and multi-functional devices. Thus, here we show a
complementary metal oxide semiconductor (CMOS) compatible fabrication of
flexible metal oxide semiconductor capacitors (MOSCAPs) with high-k/metal gate
stack, using a physical vapor deposition (PVD) cost-effective technique to
obtain high quality Ge channel. We report outstanding bending radius ~ 1.25 mm
and semi-transparency of 30%.