Page 06/25/2014 03:46:03

Amer's paper in IEEE 2014 S3S Conference!


​Dr. Amer Diab has started scoring goal! First one has been netted to IEEE 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) (6 - 9 Oct 2014, Milbrae, California).

High Temperature Performance of Flexible SOI FinFETs with Sub-20 nm Fins by A. Diab, G. A. Torres Sevilla, M. T. Ghoneim and M. M. Hussain

We demonstrate a flexible version of the semiconductor industry’s most advanced transistor topology – FinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-k/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). The dependence of the I-V curves with temperature has been also discussed.

After a very successful first edition in 2013, the 2014 second edition of the IEEE S3S will take place in San Francisco, CA. IEEE S3S is the combination of the former IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference. This industry-wide event will gather together widely known experts, contributed papers and invited talks on 3 main topics: (1) SOI Technology, (2) Subthreshold circuit designs, architectures, and devices, and (3) 3D Integration. Combining these three topics enables to provide very extensive and high quality technical content, and makes the conference the perfect venue to present and learn about the most up to date trends in CMOS and post-CMOS Scaling and the low-power SOC eco-system.


Way to go, Amer!