Ghoneim is now the official forerunner of reliability for
flexible electronics … his (coauthored with our beloved Dr. J. P. Rojas, great friend
and collaborator UT Dallas Asst. Prof. C. D. Young, and our treasured mentor
Dr. Gennadi Bersuker, and MMH) paper entitled, “Electrical analysis of
high-κ/metal gate metal oxide semiconductor capacitors on flexible bulk
mono-crystalline silicon (100)” has extensively discussed reliability of
flexible inorganic electronics. We have reported on the electrical study of the high-κ/metal gate
metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 mm) silicon fabric which is peeled
off using a CMOS compatible process from a standard bulk mono-crystalline (100)
silicon substrate. A lifetime projection is extracted using statistical
analysis of the ramping voltage (Vramp) breakdown and time dependent
dielectric breakdown (TDDB) data. The obtained flexible MOSCAPs operational voltages
satisfying the 10 years lifetime benchmark are compared to those of the control
MOSCAPs – not peeled off from the silicon wafer.
Congratulations
Ghoneim for patience and undertaking something which is often considered as
boring but in reality if anyone sincerely believes in the future of flexible
electronics must do an in depth reliability analysis of that to ensure the
correct momentum and real consumer application space for flexible electronics.
Ghoneim: Keep it up!
Gennadi - we wish you all the best so you get well soon our great mentor and come back to work with us again ...