Congratulations to Dr. Amer Diab for his paper, “High
Temperature Study of Flexible Silicon-On-Insulator Fin Field-Effect Transistors”
to be accepted to Applied Physics Letters!
In this paper, Dr. Diab with co-authors (G. A. Torres
Sevilla, M. T. Ghoneim and M. M. Hussain), have reported high temperature
electrical transport characteristics of a flexible version of the semiconductor
industry’s most advanced architecture: fin field-effect transistor (FinFET) on
silicon-on-insulator (SOI) with sub-20 nm fins and high-k/metal gate stacks. Characterization from room to high
temperature (150 °C) was completed to determine temperature dependence of drain
current (Ids), gate leakage current (Igs), transconductance (gm)
and extracted low-field mobility (μ0). Mobility degradation with temperature
is mainly caused by phonon scattering. The other device characteristics show insignificant
difference at high temperature which proves the suitability of inorganic flexible
electronics with advanced device architecture.
This paper is an important to study the charge transport
phenomena in flexible devices specially when they will experience extreme
bending … a lot more to understand and this is the first step towards that. Way
to go, Dr. Diab!