Dr. Amer Diab has made his back-to-back punch and this time
it is in IEEE Transactions on Electron Devices!!
Room to High Temperature Measurements of Flexible SOI
FinFETs with Sub-20 nm Fins by Amer Diab, Galo Torres Sevilla, Sorin
Cristoloveanu, and Muhammad Mustafa Hussain
In this paper, we have
reported the temperature dependence of the core electrical parameters and
transport characteristics of a flexible version of fin field-effect transistor
(FinFET) on silicon-on-insulator (SOI) with sub-20 nm wide fins and high-k/metal
gate stacks. For the first time, we have characterized them from room to high
temperature (150 °C) to show the impact of temperature variation on drain
current, gate leakage current and transconductance. Variation of extracted
parameters such as low-field mobility, sub-threshold swing, threshold voltage
and ON-OFF current characteristics has been reported too. Direct comparison has
been made to a rigid version of the SOI FinFETs. We have found that the
mobility degradation with temperature is mainly caused by phonon scattering
mechanism. The overall excellent devices performance at high temperature after
release has been outlined proving the suitability of truly high-performance
flexible inorganic electronics with such advanced architecture.
We are also humbled
to have IEEE Fellow Prof. Sorin Cristoloveanu for providing us with valuable
advices regarding this paper.
Way to go, Dr. Diab!!