Page 11/30/2014 09:47:15

Aftab's SiSn paper in JAP!

11/30/2014
A good productive month for Aftab. This time in Journal of Applied Physics in collaboration with Dr. Nirpendra Singh and Prof. Udo Schwingenschloegl.
 
Exploring SiSn as a Performance Enhancing Semiconductor: A Theoretical and Experimental Approach
 
Aftab M. Hussain1, Nirpendra Singh2, Hossain Fahad1, Kelly Rader1, Udo Schwingenschlögl2, Muhammad Hussain1
 
1Integrated Nanotechnology Lab, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
2Material Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well as experimentally by fabricating MOSFETs. Our study suggests that the alloy offers interesting possibilities in the realm of silicon band gap tuning. We have explored diffusion of tin (Sn) into the industry’s most widely used substrate, silicon (100), as it is the most cost effective, scalable and CMOS compatible way of obtaining SiSn. Our theoretical model predicts a higher mobility for p-channel SiSn MOSFETs, due to a lower effective mass of the holes, which has been experimentally validated using the fabricated MOSFETs. We report an increase of 13.6% in the average field effect hole mobility for SiSn devices compared to silicon control devices.
Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. The journal also publishes special collections focusing on research of particular current or emerging interest. Journal of Applied Physics retains its spot as the most highly cited journal in Applied Physics, publishing original, full-length  articles.(Thomson Reuters, 2014): Five-Year Impact Factor 2.259.
 
Having a low cost solution for SiSn compared to Stanford-NUS’s GeSn is definitely competitive. Way to go, Aftab – keep it up!