Amir Hanna has played it very well with germanium based
nanotube tunnel FET in Journal of Applied Physics.
Si/Ge Hetero-structure
Nanotube Tunnel Field Effect Transistor
A.N. Hanna1, M. M. Hussain1
1 Integrated
Nanotechnology Lab, Computer Electrical Mathematical Science and Engineering,
King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi
Arabia
We discuss the physics of conventional channel material
(Silicon/Germanium hetero-structure) based transistor topology mainly
core/shell (inner/outer) gated nanotube vs.
gate-all-around nanowire architecture for tunnel field effect transistor
application. We show that nanotube topology can result in higher performance
through higher normalized current when compared to nanowire architecture at Vdd
= 1 V due to the availability of larger tunneling cross section and lower
Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60
mV/dec performance for more than 5 orders of magnitude of drain current. This
enables the nanotube configuration achieving performance same as the nanowire
architecture even when Vdd is scaled down to 0.5 V.
Using conventional channel materials such as silicon,
silicon germanium, III-V in a nanotube architecture with core and shell gate
structures is not a child’s play or making gadgets/widgets (as we are dubbed
sometimes) – rather a concept built from the scratch with deep scientific
foundation and heading towards complex engineering based technology
development. We understand not everyone can play in major leagues: MLB, NBA and
NFL at a time but that does not mean exception does not exist … J
[No way on earth
someone can play in all the premier leagues without playing it hard]