First one for this year and looking forward to more ...
Thin PZT Based Ferroelectric Capacitors on Flexible Silicon
for Non-Volatile Memory Applications
by
Mohamed T. Ghoneim, Mohammed A. Zidan, Mohammed Y. Alnassar,
Amir N. Hanna, Jurgen Kosel, Khaled N. Salama, and Muhammad M. Hussain
A collaborative effort and our first major flexible memory
paper – congrats to Ghoneim because this is a substantial work due to the
following reasons:
(i)
Record polarization, capacitance, and endurance
(1 billion write-erase cycles) values for flexible FeRAMs;
(ii)
Uncompromising retention ability under varying dynamic
stress;
(iii)
A minimum bending radius of 5 mm.
Ultra-thin version of the inorganic thin films can provide
exciting flexibility while retaining the advantageous attributes inherent in
the state-of-the-art electronics. From that perspective, we have shown a
pragmatic CMOS based approach to transform thin PZT based FeRAM on silicon into
a flexible FeRAM.
Way to go, Ghoneim and academic SEAL team!