Page 03/13/2015 21:00:29

Our first major paper on flexible memory by Ghoneim in Advanced Electronic Materials!

First one for this year and looking forward to more ...
Thin PZT Based Ferroelectric Capacitors on Flexible Silicon for Non-Volatile Memory Applications
Mohamed T. Ghoneim, Mohammed A. Zidan, Mohammed Y. Alnassar, Amir N. Hanna, Jurgen Kosel, Khaled N. Salama, and Muhammad M. Hussain
A collaborative effort and our first major flexible memory paper – congrats to Ghoneim because this is a substantial work due to the following reasons:
(i)                  Record polarization, capacitance, and endurance (1 billion write-erase cycles) values for flexible FeRAMs;
(ii)                Uncompromising retention ability under varying dynamic stress;
(iii)               A minimum bending radius of 5 mm.
Ultra-thin version of the inorganic thin films can provide exciting flexibility while retaining the advantageous attributes inherent in the state-of-the-art electronics. From that perspective, we have shown a pragmatic CMOS based approach to transform thin PZT based FeRAM on silicon into a flexible FeRAM.
Way to go, Ghoneim and academic SEAL team!