One more time Amir has come out as winner after losing a lot
of blood … This time in (Nature) Scientific Reports.
InAs/Si Hetero-Junction Nanotube Tunnel Transistors
Amir N. Hanna1, Hossain M. Fahad1,
and Muhammad M. Hussain1,*
1Integrated Nanotechnology Lab, Electrical
Engineering, Computer Electrical and Mathematical Sciences & Engineering
Division, King Abdullah University of Science and Technology, Thuwal
23955-6900, Saudi Arabia.
Hetero-structure tunnel junctions in non-planar
gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant
enhancement in ‘ON’ state tunnel current over their all-silicon counterpart.
Here we show the unique concept of nanotube TFET in a hetero-structure
configuration that is capable of much higher drive current as opposed to that
of GAA NW TFETs. Through the use of
inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET
leverages physically larger tunneling area while achieving higher driver
current (ION) and saving real estates by eliminating arraying
requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET
with a 100 nm core gate has a 5x normalized output current compared to a 10 nm
diameter GAA NW TFET.
Congrats and keep it coming – every fight makes us stronger …