This is a major milestone where highly scaled FinFET CMOS
has been flexed using soft etch back and then it has been transferred on
various asymmetric surfaces including fabric. A hard fought paper where many
contributions have been integrated by the “integrator”: JPR.
Non-Planar
Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and
Vinyl via Soft Material-Enabled
Double-Transfer Printing
Jhonathan P. Rojas,†,§ Galo A. Torres
Sevilla,†,§ Nasir Alfaraj,†
Mohamed T. Ghoneim, † Arwa T. Kutbee,† Ashvitha
Sridharan,‡ Muhammad Mustafa Hussain*,†
† Integrated Nanotechnology Lab, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
‡ The KAUST Schools, King Abdullah University of
Science and Technology, Thuwal 23955-6900, Saudi Arabia
§Authors contributed equally to
this work
The ability to incorporate rigid but high-performance
nano-scale non-planar complementary metal-oxide semiconductor (CMOS)
electronics with curvilinear, irregular, or asymmetric shapes and surfaces is
an arduous but timely challenge in enabling the production of wearable electronics
with an in-situ
information-processing ability in the digital world. Therefore, we are
demonstrating a soft-material enabled double-transfer-based process to
integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field
effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect
transistors (MOSFETs) on various asymmetric surfaces to study their
compatibility and enhanced applicability in various emerging fields. FinFET
devices feature sub-20 nm dimensions and state-of-the-art, high-k/metal gate
stacks, showing no performance alteration after the transfer process. A further
analysis of the transferred MOSFET devices, featuring 1 mm gate length,
exhibits an ION value of
nearly 70 mA/mm (VDS = 2
V, VGS = 2 V) and a low
sub-threshold swing of around 90 mV/dec, proving that a soft interfacial
material can act both as a strong adhesion/interposing layer between devices
and final substrate as well as a means to reduce strain, which ultimately helps
maintain the device’s performance with insignificant deterioration even at a
high bending state.
Great work Jhonathan et
al. – keep it up!