Ghoneim has given us an Eid gift in APL!!
Study of harsh environment operation of flexible
ferroelectric memory integrated with PZT and silicon fabric
M. T. Ghoneim and M. M. Hussain
Flexible memory can enable industrial, automobile, space,
and smart grid centered harsh/extreme environment focused electronics
application(s) for enhanced operation, safety, and monitoring where bent or
complex shaped infrastructures are common and state-of-the-art rigid
electronics cannot be deployed. Therefore, we report on the
physical-mechanical-electrical characteristics of a flexible ferroelectric
memory based on lead zirconium titanate (PZT) as a key memory material and
flexible version of bulk mono-crystalline silicon (100). The experimented
devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal
strain (high pressure of ~260 MPa), and full functionality up to 225 °C high
temperature in ambient gas composition (21% oxygen and 55% relative humidity).
The devices showed unaltered data retention and fatigue properties under harsh
conditions, still the reduced memory window (20% difference between switching
and non-switching currents at 225°C) requires sensitive sense circuitry for
proper functionality and is the limiting factor preventing operation at higher
temperatures.
Ghone
im – keep it up!