Page 08/19/2015 05:55:12

Aftab's SiSn Diode Paper in APL!

Congratulations to Aftab for his new paper, “SiSn Diodes: Theoretical Analysis and Experimental Verification” to be published in Appl. Phys. Lett!
Authored by: Aftab M. Hussain, Nimer Wehbe, Muhammad M. Hussain [Nimer Wehbe is from Imaging and Characterization Lab Core Facility in KAUST]
We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4” silicon wafer using thermal diffusion of Sn We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11±0.09 eV. This low-cost, CMOS compatible and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.
It was an interesting one – with some back and forth rebuttals, a hard fought win, as always :-)