Page 09/10/2015 19:03:39

US Patent is awarded to Silicon nanotube FET concept!


The grandest of all our ideas so far. A hard fought victory!! US patent is awarded to the concept of Silicon nanotube with core shell gate stacks which in contrary to modern semiconductor physics can achieve ultra-high performance due to full volume inversion, extreme energy efficiency due to gating from all possible sides and finally area efficiency to overcome challenges with arrays of nanowire devices.

Lead Inventor: MM Hussain, Co-inventors: HM Fahad, CE Smith, JP Rojas.