The paper which is being heavily discussed even before it
was accepted.
The first ever demonstration and discussion of effectiveness
of reversibly bistable material for free form electronics.
“Functional integrity of flexible n-channel
metal─oxide─semiconductor field-effect transistors on a reversibly bistable
platform”.
N. Alfaraj, A. M. Hussain, G. A. Torres Sevilla, M. T.
Ghoneim, J. P. Rojas, A. B. Aljedaani, and M. M. Hussain
Flexibility can bring a new dimension to state-of-the-art
electronics, such as rollable displays and integrated circuit systems being
transformed into more powerful resources. Flexible electronics are typically
hosted on polymeric substrates. Such substrates can be bent and rolled up, but
cannot be independently fixed at a rigid perpendicular position necessary to
realize rollable display-integrated gadgets and electronics. A
reversibly
bistable material can assume two stable states in a reversible way: flexibly
rolled state and independently unbent state. Such materials are used in cycling
and biking safety wristbands and a variety of ankle bracelets for orthopedic
healthcare. They are often wrapped around an object with high impulsive force
loading. We studied the effects of
cumulative impulsive force loading on thinned (25 um) flexible silicon-based
n-channel metal─oxide─semiconductor field-effect transistor devices housed on a
reversibly bistable flexible platform. We found that the transistors have
maintained their high performance level up to accumulated 180 kN of impact
force loading. The gate dielectric layers have maintained their reliability,
which is evidenced by the low leakage current densities. Also, we observed low
variation in the effective electron mobility values, which manifests that the
device channels have maintained their carrier transport properties.
Nasir: Keep going and make voluminous impact!