Page 11/11/2015 17:58:52

Abdulilah's first journal paper on amorphous metal based NEM switches in IoP nanotechnology!

We publish reasonably good number of papers but this is the one I am so jubilantly happy! Abdulilah has got his first paper published in IoP nanotechnology (impact factor in 2013: 3.68) and thanks to Aftab and Prof. Tsu Jae King Liu of UC Berkeley for their surreal help. Additionally, this is the first paper we are publishing based on our amorphous metal based nanoelectromechanical (NEM) switch.
3-Terminal Nanoelectromechanical Switch Based On Tungsten Nitride – An Amorphous Metallic Material
Abdulilah M. Mayet, Aftab M. Hussain and Muhammad M. Hussain
Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a 3-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young’s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.
Hope there will be two more soon in this area!