Our entry to digital circuits with amorphous oxide semiconductor
based wavy channel TFTs!
Amorphous Zinc Oxide Integrated Wavy Channel Thin Film
Transistor Based High Performance Digital Circuits
Amir N. Hanna, Aftab M. Hussain, Hesham Omran, Sarah
Alshareef, Khaled N. Salama, and Muhammad M. Hussain
High performance thin film transistor (TFT) can be a great
driving force for display, sensor/actuator, integrated electronics, and
distributed computation for Internet of Everything applications. While
semiconducting oxides like zinc oxide (ZnO) present promising opportunity in
that regard, still wide area of improvement exists to increase the performance
further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT
which increases transistor width without chip area penalty, enabling high performance
in material agnostic way. We further demonstrate digital logic NAND circuit
using the WC architecture and compare it to the conventional planar
architecture. The WC architecture circuits have shown 2× higher peak-to-peak
output voltage for the same input voltage. They also have 3× lower high-to-low
propagation delay times, respectively, when compared to the planar
architecture. The performance enhancement is attributed to both extra device
width and enhanced field effect mobility due to higher gate field
electrostatics control.
More in the pipeline! Congrats the collaborative team (with Sensors Group at KAUST lead by Prof. Khaled Salama) including
Sarah who did a summer internship in our lab from King AbdulAziz University!!