Page 02/18/2016 19:39:13

Amani and Ghoneim's Paper in APL!

A lot of credit goes to Amani – she has patiently learnt and tried and failed and retried and then succeeded today by having fruit of her work (mentored by Galo) published in Appl. Phys. Lett.
High performance high-κ/metal gate CMOS circuit element on flexible silicon
G. A. Torres Sevilla, A. S. Almuslem, A. Gumus, A. M. Hussain, M. E. Cruz, and M. M. Hussain
First two authors contributed equally
Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 µm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using Excimer laser. Impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects and packaging to obtain fully flexible electronic systems in CMOS compatible way.
Hello world!
We are now ready to transfer and package – the last frontier interconnecting is also on site …