PowerMEMS 2012

Oral Presentation in PowerMEMS 2012

8/29/2012
​Collaborative paper by E. E. Aktakka, C. E. Smith, N. Ghafouri, R. L. Peterson, M. M. Hussain, K. Najafi, “Heterogeneous Integration of Co-evaporated Bismuth/Antimony Telluride Thin Films Based Thermoelectric Harvesters on FinFET CMOS Chip”, PowerMEMS 2012, Atlanta, Georgia, USA features
This paper presentsthe integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thin films based thermoelectric harvesters on industry’s most advanced FinFET CMOS on SOI substrate. These films can be used to fabricate planar thermoelectric generators (TEG) or thermoelectric coolers (TEC) directly with CMOS circuits. The thermoelectric films are deposited by co-evaporation through shadow-masks in a post-CMOS process, with improved contact resistance via pre-deposition surface treatments. Transistor performance showed no significant change upon TEG fabrication, indicating CMOS compatibility of the thermoelectric thin film deposition process. A 2.14×2.14-mm2 sized square-shaped planar thermoelectric harvester has been fabricated as a demonstration vehicle and generates 0.67μW from a temperature gradient of 21K, with an average open circuit output of 233μV/K per thermocouple. Future improved device architectures based on the presented technology can harvest energy from on-chip temperature gradients in high-load CMOS circuits.